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5SHX2645L0006 3BHB012961R0002 | ABB| IGCT Module
SKU: 5SHX2645L0006 3BHB012961R0002

  • Manufacturer: ABB

  • Product No.: 5SHX2645L0006 3BHB012961R0002

  • Condition：In stock

  • Product Type: IGCT Module

  • Product Origin: Switzerland

  • Payment:T/T, Western Union

  • Weight: 2000g

  • Shipping port: Xiamen

  • Warranty: 12 months

Description

The ABB 5SHX 2645L0006 is a Reverse Conducting Integrated Gate-Commutated Thyristor (IGCT) module designed for high-power switching applications. Optimized for medium frequency operations, it is widely used in industrial and renewable energy systems, including Medium Voltage Drives (MVD), traction systems, wind power conversion, FACTS, Solid State Breakers (SSB), power quality improvement, and induction heating.

Features

  • High Snubberless Turn-Off Rating
  • Optimized for Medium Frequency
  • High Electromagnetic Immunity
  • Simple Control Interface with Status Feedback
  • Compatible with AC or DC Supply Voltage
  • Option for Series Connection (contact factory for details)

Technical Specifications

  • Part Number: 5SHX 2645L0006 | 3BHB012961R0002
  • Manufacturer: ABB
  • Product Type: Reverse Conducting IGCT Module
  • Nominal Current (ITGQM): 2200 A
  • Maximum Blocking Voltage (VDRM): 4500 V
  • Max. Peak Non-Repetitive Surge Current (ITSM): 17 kA
  • Threshold Voltage (VT0): 1.8 V
  • On-State Voltage (VT): 2.3 to 2.95 V at IT = 2200 A, Tj = 125 °C
  • Slope Resistance (rT): 0.533 mΩ
  • Permanent DC Voltage (VDC): 2800 V
  • Repetitive Peak Off-State Current (IDRM): ≤ 50 mA (VD = VDRM, Gate Unit energized)
  • Mounting Force (FM): 42 to 46 kN
  • Pole-Piece Diameter (Dp): 85 mm ± 0.1 mm
  • Housing Thickness (H): 25.7 to 26.2 mm (clamped Fm = 44 kN)
  • Weight (m): 2.9 kg
  • Surface Creepage Distance (DS): 33 mm (Anode to Gate)
  • Air Strike Distance (Da): 10 mm (Anode to Gate)
  • Length (l): 439 mm ± 1.0 mm
  • Height (h): 41 mm ± 1.0 mm
  • Width (w): 173 mm ± 1.0 mm
  • Average On-State Current (IT(AV)M): 1010 A (Half sine wave, Tc = 85 °C)
  • RMS On-State Current (IT(RMS)): 1590 A
  • Peak Non-Repetitive Surge Current (ITSM):
    • 25 kA (tp = 3 ms, Tj = 125 °C, sine half wave)
    • 17 kA (tp = 10 ms, Tj = 125 °C, sine half wave)
    • 13 kA (tp = 30 ms, Tj = 125 °C, sine half wave)
  • Limiting Load Integral (I²t):
    • 938·10³ A²s (tp = 3 ms)
    • 1.45·10⁶ A²s (tp = 10 ms)
    • 2.55·10⁶ A²s (tp = 30 ms)
  • Critical Rate of Rise of On-State Current (diT/dt(cr)): 100 A/µs
  • Turn-On Delay Time (td(on)): 3.5 µs (Tj = 125 °C, VD = 2800 V, IT = 2200 A, di/dt = VD / Li, Li = 5 µH, CCL = 10 µF, LCL = 300 nH, DCL = 5SDF 10H4503)
  • Turn-On Delay Time Status Feedback (td(on) SF): 7 µs
  • Rise Time (tr): 1 µs
  • Turn-On Energy per Pulse (Eon): 0.85 J
  • Controllable Turn-Off Current (ITGQM1): 2200 A (VDM ≤ VDRM, Tj = 125 °C, Rs = 0.65 Ω, CCL = 10 µF, LCL ≤ 300 nH, DCL = 5SDF 10H4503, VD = 2800 V)
  • Controllable Turn-Off Current (ITGQM2): 1100 A (VD = 3200 V)
  • Turn-Off Delay Time (td(off)): 7 µs (VD = 2800 V, Tj = 125 °C, VDM ≤ VDRM, Rs = 0.65 Ω, ITGQ = 2200 A, Li = 5 µH, CCL = 10 µF, LCL = 300 nH, DCL = 5SDF 10H4503)
  • Turn-Off Delay Time Status Feedback (td(off) SF): 7 µs
  • Turn-Off Energy per Pulse (Eoff): 7.8 to 12 J
  • Diode Average On-State Current (IF(AV)M): 390 A (Half sine wave, TC = 85 °C)
  • Diode RMS On-State Current (IF(RMS)): 620 A
  • Diode Peak Non-Repetitive Surge Current (IFSM):
    • 14.3 kA (tp = 3 ms, Tj = 125 °C)
    • 10.6 kA (tp = 10 ms, Tj = 125 °C)
  • Diode Limiting Load Integral (I²t):
    • 307·10³ A²s (tp = 3 ms)
    • 562·10³ A²s (tp = 10 ms)
  • Diode On-State Voltage (VF): 3.54 to 5.4 V at IF = 1800 A, Tj = 125 °C
  • Diode Threshold Voltage (V(F0)): 2.7 V (Tj = 125 °C, IT = 400 A - 3000 A)
  • Diode Slope Resistance (rF): 1.24 mΩ
  • Peak Forward Recovery Voltage (VFRM):
    • 80 V (dIF/dt = 650 A/µs, Tj = 125 °C)
    • 250 V (dIF/dt = 3000 A/µs, Tj = 125 °C)
  • Decay Rate On-State Current (di/dt(cr)):
    • 650 A/µs (IFM = 2200 A, Tj = 125 °C, VDClink = 2800 V)
    • 650 A/µs (IFM = 3200 A, Tj = 125 °C, VDClink = 1900 V)
  • Reverse Recovery Current (IRM): 900 A (Tj = 125 °C, IFM = 2200 A, VD = 2800 V, -dIF/dt = 650 A/µs, LCL = 300 nH, CCL = 10 µF, Rs = 0.65 Ω, DCL = 5SDF 10H4503)
  • Reverse Recovery Charge (Qrr): 2800 µC
  • Turn-Off Energy (Erec): 2.7 to 4 J
  • Gate Unit Voltage (VGin): 28 to 40 V (AC square wave amplitude or DC voltage, 15 kHz - 100 kHz)
  • Min. Current to Power Up Gate Unit (IGin Min): 2 A (rectified average current)
  • Gate Unit Power Consumption (PGin Max): 130 W
  • Internal Current Limitation (IGin Max): 8 A (rectified average current limited by the Gate Unit)
  • Optical Input Power (Pon CS): -15 to -1 dBm (CS: Command signal, valid for 1mm plastic optical fiber (POF))
  • Optical Noise Power (Poff CS): -45 dBm
  • Optical Output Power (Pon SF): -19 to -1 dBm (SF: Status feedback)
  • Optical Noise Power (Poff SF): -50 dBm
  • Pulse Width Threshold (tGLITCH): 400 ns (max. pulse width without response)
  • External Retrigger Pulse Width (tretrig): 700 to 1100 ns
  • Junction Operating Temperature (Tvj): 0 to 125 °C
  • Storage Temperature Range (Tstg): 0 to 60 °C
  • Ambient Operational Temperature (Ta): 0 to 50 °C
  • Transient Thermal Impedance (Z(t)) for GCT:
    • Ri(K/kW): 8.769, 1.909, 1.218, 0.699
    • τi(s): 0.5407, 0.0792, 0.0091, 0.0025
  • Transient Thermal Impedance (Z(t)) for Diode:
    • Ri(K/kW): 17.057, 5.007, 2.498, 1.439
    • τi(s): 0.5460, 0.0829, 0.0089, 0.0023
Order and Warranty Information

Terms of Purchase and Returns

Detailed guidelines on minimum order quantity, delivery times, payment options, warranty, and return policies.

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We gladly accept bulk orders, with a minimum order quantity of just one unit.

Upon request, we can provide all necessary documents, including Certificates of Origin/Conformance and other required export paperwork.

We accept 100% T/T (Telegraphic Transfer) payment before shipping. For items with lead times, a 30% deposit is required upfront, with the remaining 70% payable before shipment. For RMB transfers, please contact us if you have an agent in China.

All new and original items come with a standard one-year warranty. For extended warranty options, feel free to contact us for pricing details.

We prioritize your satisfaction. If you need to return an item, it must be done within 30 days of purchase. The product must be unused, unopened, and in its original packaging, including all accessories. Refunds will be processed within 5-7 business days of receiving the return. Please note, shipping and handling charges are non-refundable.
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5SHX2645L0006 3BHB012961R0002 | ABB| IGCT Module
5SHX2645L0006 3BHB012961R0002 | ABB| IGCT Module
5SHX2645L0006 3BHB012961R0002 | ABB| IGCT Module
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5SHX2645L0006 3BHB012961R0002 | ABB| IGCT Module

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Descriptions

Description

The ABB 5SHX 2645L0006 is a Reverse Conducting Integrated Gate-Commutated Thyristor (IGCT) module designed for high-power switching applications. Optimized for medium frequency operations, it is widely used in industrial and renewable energy systems, including Medium Voltage Drives (MVD), traction systems, wind power conversion, FACTS, Solid State Breakers (SSB), power quality improvement, and induction heating.

Features

  • High Snubberless Turn-Off Rating
  • Optimized for Medium Frequency
  • High Electromagnetic Immunity
  • Simple Control Interface with Status Feedback
  • Compatible with AC or DC Supply Voltage
  • Option for Series Connection (contact factory for details)

Technical Specifications

  • Part Number: 5SHX 2645L0006 | 3BHB012961R0002
  • Manufacturer: ABB
  • Product Type: Reverse Conducting IGCT Module
  • Nominal Current (ITGQM): 2200 A
  • Maximum Blocking Voltage (VDRM): 4500 V
  • Max. Peak Non-Repetitive Surge Current (ITSM): 17 kA
  • Threshold Voltage (VT0): 1.8 V
  • On-State Voltage (VT): 2.3 to 2.95 V at IT = 2200 A, Tj = 125 °C
  • Slope Resistance (rT): 0.533 mΩ
  • Permanent DC Voltage (VDC): 2800 V
  • Repetitive Peak Off-State Current (IDRM): ≤ 50 mA (VD = VDRM, Gate Unit energized)
  • Mounting Force (FM): 42 to 46 kN
  • Pole-Piece Diameter (Dp): 85 mm ± 0.1 mm
  • Housing Thickness (H): 25.7 to 26.2 mm (clamped Fm = 44 kN)
  • Weight (m): 2.9 kg
  • Surface Creepage Distance (DS): 33 mm (Anode to Gate)
  • Air Strike Distance (Da): 10 mm (Anode to Gate)
  • Length (l): 439 mm ± 1.0 mm
  • Height (h): 41 mm ± 1.0 mm
  • Width (w): 173 mm ± 1.0 mm
  • Average On-State Current (IT(AV)M): 1010 A (Half sine wave, Tc = 85 °C)
  • RMS On-State Current (IT(RMS)): 1590 A
  • Peak Non-Repetitive Surge Current (ITSM):
    • 25 kA (tp = 3 ms, Tj = 125 °C, sine half wave)
    • 17 kA (tp = 10 ms, Tj = 125 °C, sine half wave)
    • 13 kA (tp = 30 ms, Tj = 125 °C, sine half wave)
  • Limiting Load Integral (I²t):
    • 938·10³ A²s (tp = 3 ms)
    • 1.45·10⁶ A²s (tp = 10 ms)
    • 2.55·10⁶ A²s (tp = 30 ms)
  • Critical Rate of Rise of On-State Current (diT/dt(cr)): 100 A/µs
  • Turn-On Delay Time (td(on)): 3.5 µs (Tj = 125 °C, VD = 2800 V, IT = 2200 A, di/dt = VD / Li, Li = 5 µH, CCL = 10 µF, LCL = 300 nH, DCL = 5SDF 10H4503)
  • Turn-On Delay Time Status Feedback (td(on) SF): 7 µs
  • Rise Time (tr): 1 µs
  • Turn-On Energy per Pulse (Eon): 0.85 J
  • Controllable Turn-Off Current (ITGQM1): 2200 A (VDM ≤ VDRM, Tj = 125 °C, Rs = 0.65 Ω, CCL = 10 µF, LCL ≤ 300 nH, DCL = 5SDF 10H4503, VD = 2800 V)
  • Controllable Turn-Off Current (ITGQM2): 1100 A (VD = 3200 V)
  • Turn-Off Delay Time (td(off)): 7 µs (VD = 2800 V, Tj = 125 °C, VDM ≤ VDRM, Rs = 0.65 Ω, ITGQ = 2200 A, Li = 5 µH, CCL = 10 µF, LCL = 300 nH, DCL = 5SDF 10H4503)
  • Turn-Off Delay Time Status Feedback (td(off) SF): 7 µs
  • Turn-Off Energy per Pulse (Eoff): 7.8 to 12 J
  • Diode Average On-State Current (IF(AV)M): 390 A (Half sine wave, TC = 85 °C)
  • Diode RMS On-State Current (IF(RMS)): 620 A
  • Diode Peak Non-Repetitive Surge Current (IFSM):
    • 14.3 kA (tp = 3 ms, Tj = 125 °C)
    • 10.6 kA (tp = 10 ms, Tj = 125 °C)
  • Diode Limiting Load Integral (I²t):
    • 307·10³ A²s (tp = 3 ms)
    • 562·10³ A²s (tp = 10 ms)
  • Diode On-State Voltage (VF): 3.54 to 5.4 V at IF = 1800 A, Tj = 125 °C
  • Diode Threshold Voltage (V(F0)): 2.7 V (Tj = 125 °C, IT = 400 A - 3000 A)
  • Diode Slope Resistance (rF): 1.24 mΩ
  • Peak Forward Recovery Voltage (VFRM):
    • 80 V (dIF/dt = 650 A/µs, Tj = 125 °C)
    • 250 V (dIF/dt = 3000 A/µs, Tj = 125 °C)
  • Decay Rate On-State Current (di/dt(cr)):
    • 650 A/µs (IFM = 2200 A, Tj = 125 °C, VDClink = 2800 V)
    • 650 A/µs (IFM = 3200 A, Tj = 125 °C, VDClink = 1900 V)
  • Reverse Recovery Current (IRM): 900 A (Tj = 125 °C, IFM = 2200 A, VD = 2800 V, -dIF/dt = 650 A/µs, LCL = 300 nH, CCL = 10 µF, Rs = 0.65 Ω, DCL = 5SDF 10H4503)
  • Reverse Recovery Charge (Qrr): 2800 µC
  • Turn-Off Energy (Erec): 2.7 to 4 J
  • Gate Unit Voltage (VGin): 28 to 40 V (AC square wave amplitude or DC voltage, 15 kHz - 100 kHz)
  • Min. Current to Power Up Gate Unit (IGin Min): 2 A (rectified average current)
  • Gate Unit Power Consumption (PGin Max): 130 W
  • Internal Current Limitation (IGin Max): 8 A (rectified average current limited by the Gate Unit)
  • Optical Input Power (Pon CS): -15 to -1 dBm (CS: Command signal, valid for 1mm plastic optical fiber (POF))
  • Optical Noise Power (Poff CS): -45 dBm
  • Optical Output Power (Pon SF): -19 to -1 dBm (SF: Status feedback)
  • Optical Noise Power (Poff SF): -50 dBm
  • Pulse Width Threshold (tGLITCH): 400 ns (max. pulse width without response)
  • External Retrigger Pulse Width (tretrig): 700 to 1100 ns
  • Junction Operating Temperature (Tvj): 0 to 125 °C
  • Storage Temperature Range (Tstg): 0 to 60 °C
  • Ambient Operational Temperature (Ta): 0 to 50 °C
  • Transient Thermal Impedance (Z(t)) for GCT:
    • Ri(K/kW): 8.769, 1.909, 1.218, 0.699
    • τi(s): 0.5407, 0.0792, 0.0091, 0.0025
  • Transient Thermal Impedance (Z(t)) for Diode:
    • Ri(K/kW): 17.057, 5.007, 2.498, 1.439
    • τi(s): 0.5460, 0.0829, 0.0089, 0.0023