ABB | PP D113 3BHE023784R2330 | AC 800PEC Control System Module
Specification | Details |
---|---|
Description | ABB 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT Module |
Type | IGCT (Integrated Gate-Commutated Thyristor) Module |
Application | High-power switching applications in power electronics |
Key Technological Features
- GTO Structure: Incorporates a thyristor structure similar to GTO, enabling high current handling capabilities.
- Integrated Gate Structure: Allows gate control for turn-off, unlike conventional thyristors.
- Buffer Layer and Anode Transparent Emitter: Enhances switching performance and reduces turn-off losses compared to traditional GTOs.
- Combined Characteristics: Offers the high on-state current capacity of thyristors along with the controllable turn-off capability of transistors, making it suitable for medium to high-frequency, high-power applications.
ABB | PP D113 3BHE023784R2330 | AC 800PEC Control System Module
Current product
Current
Vendor:
ABB
ABB | PP D113 3BHE023784R2330 | AC 800PEC Control System Module
Regular price
$250.00
Sale price
$250.00
Regular price
$400.00
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Descriptions
Specification | Details |
---|---|
Description | ABB 5SHY3545L0020 3BHE014105R0001 5SXE08-0166 IGCT Module |
Type | IGCT (Integrated Gate-Commutated Thyristor) Module |
Application | High-power switching applications in power electronics |
Key Technological Features
- GTO Structure: Incorporates a thyristor structure similar to GTO, enabling high current handling capabilities.
- Integrated Gate Structure: Allows gate control for turn-off, unlike conventional thyristors.
- Buffer Layer and Anode Transparent Emitter: Enhances switching performance and reduces turn-off losses compared to traditional GTOs.
- Combined Characteristics: Offers the high on-state current capacity of thyristors along with the controllable turn-off capability of transistors, making it suitable for medium to high-frequency, high-power applications.