IS200EGPAG1B| GE Fanuc| Gate Pulse Amplifier
Description
The IS200EGPAG1B is a Gate Pulse Amplifier module designed for the EX2100 product line. It amplifies gate drive signals to ensure reliable and efficient operation of power semiconductor devices in exciter systems. The module provides high-current pulses to trigger thyristors or IGBTs, ensuring precise control and protection in industrial applications. It includes built-in diagnostics and protection features to enhance system reliability and safety.
Features
- High-Current Pulses: Delivers high-current gate drive signals for power semiconductors.
- Built-in Diagnostics: Continuous self-diagnostics for fault detection and logging.
- Protection Features: Includes over-voltage, over-current, and short-circuit protection.
- Compact Design: Space-efficient for easy integration into existing systems.
- Compliance: Meets relevant industry standards for safety and performance.
Technical Specifications
- Input Voltage: 24 Vdc ±10%
-
Output Voltage:
- Gate pulse voltage: Up to 1,200 Vdc (peak)
-
Output Current:
- Peak current: 10 A (typical)
- Continuous current: 5 A (typical)
- Pulse Width: Adjustable from 1 µs to 10 µs
-
Temperature Range:
- Operating temperature: -40°C to +85°C
- Storage temperature: -55°C to +90°C
- Humidity: 5% to 95% RH (non-condensing)
- Power Consumption: < 10 W
- Communication Interfaces: Supports standard industrial communication protocols (e.g., RS-485, Profibus DP, EtherNet/IP)
- Mounting: DIN rail or panel mount
-
Dimensions:
- Width: 122 mm
- Height: 92 mm
- Depth: 120 mm
- Weight: 1.2 kg
-
Compliance:
- CE
- UL
- IECEx
- ATEX
- Diagnostics: Built-in self-diagnostics for continuous monitoring and fault detection
-
Protection:
- Over-voltage protection
- Over-current protection
- Short-circuit protection
IS200EGPAG1B| GE Fanuc| Gate Pulse Amplifier
IS200EGPAG1B| GE Fanuc| Gate Pulse Amplifier
Description
The IS200EGPAG1B is a Gate Pulse Amplifier module designed for the EX2100 product line. It amplifies gate drive signals to ensure reliable and efficient operation of power semiconductor devices in exciter systems. The module provides high-current pulses to trigger thyristors or IGBTs, ensuring precise control and protection in industrial applications. It includes built-in diagnostics and protection features to enhance system reliability and safety.
Features
- High-Current Pulses: Delivers high-current gate drive signals for power semiconductors.
- Built-in Diagnostics: Continuous self-diagnostics for fault detection and logging.
- Protection Features: Includes over-voltage, over-current, and short-circuit protection.
- Compact Design: Space-efficient for easy integration into existing systems.
- Compliance: Meets relevant industry standards for safety and performance.
Technical Specifications
- Input Voltage: 24 Vdc ±10%
-
Output Voltage:
- Gate pulse voltage: Up to 1,200 Vdc (peak)
-
Output Current:
- Peak current: 10 A (typical)
- Continuous current: 5 A (typical)
- Pulse Width: Adjustable from 1 µs to 10 µs
-
Temperature Range:
- Operating temperature: -40°C to +85°C
- Storage temperature: -55°C to +90°C
- Humidity: 5% to 95% RH (non-condensing)
- Power Consumption: < 10 W
- Communication Interfaces: Supports standard industrial communication protocols (e.g., RS-485, Profibus DP, EtherNet/IP)
- Mounting: DIN rail or panel mount
-
Dimensions:
- Width: 122 mm
- Height: 92 mm
- Depth: 120 mm
- Weight: 1.2 kg
-
Compliance:
- CE
- UL
- IECEx
- ATEX
- Diagnostics: Built-in self-diagnostics for continuous monitoring and fault detection
-
Protection:
- Over-voltage protection
- Over-current protection
- Short-circuit protection
