5SHX 1060H0003 3BHB020538R0001| ABB| IGCT Module
Description
The ABB 5SHX 1060H0003 is a Reverse Conducting Integrated Gate-Commutated Thyristor (IGCT) module designed for high-power switching applications. This advanced power semiconductor is optimized for medium to high-frequency operations and is widely used in industrial and renewable energy systems, including Medium Voltage Drives (MVD), traction systems, wind power conversion, FACTS, Solid State Breakers (SSB), power quality improvement, and induction heating.
Features
- High Snubberless Turn-Off Rating: Eliminates the need for external snubber circuits.
- Fast Response: Turn-on delay < 3 µs, turn-off delay < 6 µs.
- Precise Timing: Turn-off delay variation < 800 ns.
- Patented Free Floating Silicon Technology: Optimizes performance and reliability.
- Low On-State and Switching Losses: Enhances efficiency.
- Very High EMI Immunity: Ensures reliable operation in noisy environments.
- Cosmic Radiation Withstand Rating: Suitable for harsh conditions.
Technical Specifications
- Part Number: 5SHX 1060H0003 3BHB020538R0001
- Manufacturer: ABB
- Product Type: Reverse Conducting IGCT Module
- Nominal Current (ITGQM): 900 A
- Maximum Blocking Voltage (VDRM): 5500 V
- Max. Peak Non-Repetitive Surge Current (ITSM): 7.5 kA (tp = 10 ms)
- Threshold Voltage (VT0): 1.65 V
- On-State Voltage (VT): ≤ 3.45 V at IT = 900 A
- Slope Resistance (rT): 2 mΩ
- Permanent DC Voltage (VDClink): 3300 V
- Turn-On Delay Time (tdon): ≤ 3 µs
- Turn-Off Delay Time (tdoff): ≤ 6 µs
- Turn-On Energy per Pulse (Eon): ≤ 0.5 J
- Turn-Off Energy per Pulse (Eoff): ≤ 4.8 J
- Max. Rate of Rise of On-State Current (di/dtcrit): 340 A/µs
- Min. On-Time (ton(min)): 10 µs
- Min. Off-Time (toff(min)): 10 µs
- Max. Average On-State Current (ITAVM): 355 A
- Max. RMS On-State Current (ITRMS): 555 A
- Max. Controllable Turn-Off Current (ITGQM2): 460 A (VD = 3900 V, LCL ≤ 0.6 µH)
- Max. Average On-State Diode Current (IFAVM): 165 A
- Max. RMS On-State Diode Current (IFRMS): 260 A
- Max. Peak Non-Repetitive Surge Diode Current (IFSM): 17.5 kA (tp = 1 ms)
- Diode On-State Voltage (VF): ≤ 6.4 V at IF = 900 A
- Diode Threshold Voltage (VF0): 2.53 V
- Diode Slope Resistance (rF): 4.3 mΩ
- Reverse Recovery Current (Irr): ≤ 430 A
- Diode Turn-Off Energy (Err): ≤ 2.6 J
- Gate Unit Voltage (VGDC): 20 ± 0.5 VDC
- Gate Unit Power Consumption (PGin): ≤ 26 W
- Optical Input Power (Pon CS): > -20 dBm
- Optical Noise Power (Poff CS): < -45 dBm
- Operating Junction Temperature Range (Tjop): 0…115 °C
- Storage Temperature Range (Tstg): -40…60 °C
- Ambient Operational Temperature Range (Tamb): 0…60 °C
- Thermal Resistance Junction to Case (RthJC): ≤ 25 K/kW (double side cooled)
- Thermal Resistance Case to Heatsink (RthCH): ≤ 8 K/kW (double side cooled)
- Mounting Force (Fm): 18…22 kN
- Pole-Piece Diameter (Dp): 63 mm ± 0.1 mm
- Housing Thickness (H): 26 mm ± 0.5 mm
- Surface Creepage Distance (Ds): ≥ 33 mm
- Air Strike Distance (Da): ≥ 13 mm
- Length (l): 239 mm +0/-0.5 mm
- Height (h): 62.5 mm ± 1.0 mm
- Width (w): 200 mm +0/-0.5 mm
- Weight (m): 1.7 kg
5SHX 1060H0003 3BHB020538R0001| ABB| IGCT Module
5SHX 1060H0003 3BHB020538R0001| ABB| IGCT Module
Description
The ABB 5SHX 1060H0003 is a Reverse Conducting Integrated Gate-Commutated Thyristor (IGCT) module designed for high-power switching applications. This advanced power semiconductor is optimized for medium to high-frequency operations and is widely used in industrial and renewable energy systems, including Medium Voltage Drives (MVD), traction systems, wind power conversion, FACTS, Solid State Breakers (SSB), power quality improvement, and induction heating.
Features
- High Snubberless Turn-Off Rating: Eliminates the need for external snubber circuits.
- Fast Response: Turn-on delay < 3 µs, turn-off delay < 6 µs.
- Precise Timing: Turn-off delay variation < 800 ns.
- Patented Free Floating Silicon Technology: Optimizes performance and reliability.
- Low On-State and Switching Losses: Enhances efficiency.
- Very High EMI Immunity: Ensures reliable operation in noisy environments.
- Cosmic Radiation Withstand Rating: Suitable for harsh conditions.
Technical Specifications
- Part Number: 5SHX 1060H0003 3BHB020538R0001
- Manufacturer: ABB
- Product Type: Reverse Conducting IGCT Module
- Nominal Current (ITGQM): 900 A
- Maximum Blocking Voltage (VDRM): 5500 V
- Max. Peak Non-Repetitive Surge Current (ITSM): 7.5 kA (tp = 10 ms)
- Threshold Voltage (VT0): 1.65 V
- On-State Voltage (VT): ≤ 3.45 V at IT = 900 A
- Slope Resistance (rT): 2 mΩ
- Permanent DC Voltage (VDClink): 3300 V
- Turn-On Delay Time (tdon): ≤ 3 µs
- Turn-Off Delay Time (tdoff): ≤ 6 µs
- Turn-On Energy per Pulse (Eon): ≤ 0.5 J
- Turn-Off Energy per Pulse (Eoff): ≤ 4.8 J
- Max. Rate of Rise of On-State Current (di/dtcrit): 340 A/µs
- Min. On-Time (ton(min)): 10 µs
- Min. Off-Time (toff(min)): 10 µs
- Max. Average On-State Current (ITAVM): 355 A
- Max. RMS On-State Current (ITRMS): 555 A
- Max. Controllable Turn-Off Current (ITGQM2): 460 A (VD = 3900 V, LCL ≤ 0.6 µH)
- Max. Average On-State Diode Current (IFAVM): 165 A
- Max. RMS On-State Diode Current (IFRMS): 260 A
- Max. Peak Non-Repetitive Surge Diode Current (IFSM): 17.5 kA (tp = 1 ms)
- Diode On-State Voltage (VF): ≤ 6.4 V at IF = 900 A
- Diode Threshold Voltage (VF0): 2.53 V
- Diode Slope Resistance (rF): 4.3 mΩ
- Reverse Recovery Current (Irr): ≤ 430 A
- Diode Turn-Off Energy (Err): ≤ 2.6 J
- Gate Unit Voltage (VGDC): 20 ± 0.5 VDC
- Gate Unit Power Consumption (PGin): ≤ 26 W
- Optical Input Power (Pon CS): > -20 dBm
- Optical Noise Power (Poff CS): < -45 dBm
- Operating Junction Temperature Range (Tjop): 0…115 °C
- Storage Temperature Range (Tstg): -40…60 °C
- Ambient Operational Temperature Range (Tamb): 0…60 °C
- Thermal Resistance Junction to Case (RthJC): ≤ 25 K/kW (double side cooled)
- Thermal Resistance Case to Heatsink (RthCH): ≤ 8 K/kW (double side cooled)
- Mounting Force (Fm): 18…22 kN
- Pole-Piece Diameter (Dp): 63 mm ± 0.1 mm
- Housing Thickness (H): 26 mm ± 0.5 mm
- Surface Creepage Distance (Ds): ≥ 33 mm
- Air Strike Distance (Da): ≥ 13 mm
- Length (l): 239 mm +0/-0.5 mm
- Height (h): 62.5 mm ± 1.0 mm
- Width (w): 200 mm +0/-0.5 mm
- Weight (m): 1.7 kg