IS200FGPAG1A| GE Fanuc| Gate Driver Module
Description
The IS200FGPAG1A is a Gate Driver Module designed for the EX2100 product line. It provides reliable and efficient drive signals to power semiconductor devices, such as IGBTs or thyristors, in exciter systems. The module ensures precise control and protection of these devices, enhancing the overall performance and reliability of the excitation system. It includes built-in diagnostics and protection features to monitor and safeguard against potential faults.
Features
- High-Voltage Operation: Supports gate drive voltages up to 1,200 Vdc.
- Efficient Drive Signals: Ensures precise control of power semiconductor devices.
- Built-in Diagnostics: Continuous self-diagnostics for fault detection and logging.
- Protection Features: Includes over-voltage, over-current, and short-circuit protection.
- Compact Design: Space-efficient for easy integration into existing systems.
- Compliance: Meets relevant industry standards for safety and performance.
Technical Specifications
- Input Voltage: 24 Vdc ±10%
-
Output Voltage:
- Gate pulse voltage: Up to 1,200 Vdc (peak)
-
Output Current:
- Peak current: 10 A (typical)
- Continuous current: 5 A (typical)
- Pulse Width: Adjustable from 1 µs to 10 µs
-
Temperature Range:
- Operating temperature: -40°C to +85°C
- Storage temperature: -55°C to +90°C
- Humidity: 5% to 95% RH (non-condensing)
- Power Consumption: < 10 W
- Communication Interfaces: Supports standard industrial communication protocols (e.g., RS-485, Profibus DP, EtherNet/IP)
- Mounting: DIN rail or panel mount
-
Dimensions:
- Width: 122 mm
- Height: 92 mm
- Depth: 120 mm
- Weight: 1.2 kg
-
Compliance:
- CE
- UL
- IECEx
- ATEX
- Diagnostics: Built-in self-diagnostics for continuous monitoring and fault detection
-
Protection:
- Over-voltage protection
- Over-current protection
- Short-circuit protection
IS200FGPAG1A| GE Fanuc| Gate Driver Module
IS200FGPAG1A| GE Fanuc| Gate Driver Module
Description
The IS200FGPAG1A is a Gate Driver Module designed for the EX2100 product line. It provides reliable and efficient drive signals to power semiconductor devices, such as IGBTs or thyristors, in exciter systems. The module ensures precise control and protection of these devices, enhancing the overall performance and reliability of the excitation system. It includes built-in diagnostics and protection features to monitor and safeguard against potential faults.
Features
- High-Voltage Operation: Supports gate drive voltages up to 1,200 Vdc.
- Efficient Drive Signals: Ensures precise control of power semiconductor devices.
- Built-in Diagnostics: Continuous self-diagnostics for fault detection and logging.
- Protection Features: Includes over-voltage, over-current, and short-circuit protection.
- Compact Design: Space-efficient for easy integration into existing systems.
- Compliance: Meets relevant industry standards for safety and performance.
Technical Specifications
- Input Voltage: 24 Vdc ±10%
-
Output Voltage:
- Gate pulse voltage: Up to 1,200 Vdc (peak)
-
Output Current:
- Peak current: 10 A (typical)
- Continuous current: 5 A (typical)
- Pulse Width: Adjustable from 1 µs to 10 µs
-
Temperature Range:
- Operating temperature: -40°C to +85°C
- Storage temperature: -55°C to +90°C
- Humidity: 5% to 95% RH (non-condensing)
- Power Consumption: < 10 W
- Communication Interfaces: Supports standard industrial communication protocols (e.g., RS-485, Profibus DP, EtherNet/IP)
- Mounting: DIN rail or panel mount
-
Dimensions:
- Width: 122 mm
- Height: 92 mm
- Depth: 120 mm
- Weight: 1.2 kg
-
Compliance:
- CE
- UL
- IECEx
- ATEX
- Diagnostics: Built-in self-diagnostics for continuous monitoring and fault detection
-
Protection:
- Over-voltage protection
- Over-current protection
- Short-circuit protection
